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GT8G134

Part Number	GT8G134
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Sep 3, 2014
Detailed Description	GT8G134 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G134 Strobe Flash Applications • • • Compac...
Datasheet	GT8G134 PDF File

Overview

GT8G134 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G134 Strobe Flash Applications • • • Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=2.
5V(min))/ Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Symbol VCES VGES VGES ICP PC (1) PC (2) Tj Tstg Rating 400 ±4 ±5 150 1.
1 0.
6 150 −55~150 Unit V V Collector current Collector power dissipation（t＝10 s） Junction temperature Storage temperature range A W W °C °C 1,2 3 4 EMITTER EMITTER (Gate drive connection) GATE Note: Using continuously under heavy loads (e.
g.
the a...

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