Green Product
STM6962
Aug 29.
2006
SamHop Microelectronics Corp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS
60V
FEATURES
( m Ω ) Max
ID
6.
5A
RDS(ON)
Super high dense cell design for low RDS(ON).
36 @ VGS = 10V 42 @ VGS = 4.
5V
Rugged and reliable.
Surface Mount Package.
D1
8
D1
7
D2
6
D2
5
SO-8 1
1 2 3 4
S1
G1
S2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed
b a
Symbol VDS VGS 25 C 70 C ID IDM
a
Limit 60 20 6.
5 5.
5 25 1.
7 2
Unit V V A A A A
Drain-Source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Tempe...