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STM6914

SamHop Microelectronics
Part Number STM6914
Manufacturer SamHop Microelectronics
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Oct 15, 2014
Detailed Description Green Product STM6914 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transisto...
Datasheet PDF File STM6914 PDF File

STM6914
STM6914

Overview
Green Product STM6914 Ver 1.
1 S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 6.
5A R DS(ON) (m Ω) Max 32 @ VGS=10V 52 @ VGS=4.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 6.
5 5.
2 24 a Units V V A A A W W °C Maximum Power Dissipation 2 1.
28 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.
5 °C/W Details are subject to change without notice.
Sep,23,2014 1 www.
samhop.
com.
tw STM6914 Ver 1.
1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 uA nA VDS=VGS , ID=250uA VGS=10V , ID=6.
5A VGS=4.
5V , ID=5.
1A VDS=5V , ID=6.
5A 1 1.
9 26 40 7 3 32 52 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance c VDS=15V,VGS=0V f=1.
0MHz 513 91 73 10 11 17.
5 10.
5 9.
2 4.
7 1.
3 2.
7 2 0.
82 1.
2 SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=6.
5A,VGS=10V VDS=15V,ID=6.
5A,VGS=4.
5V VDS=15V,ID=6.
5A, VGS=4.
5V ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS ...


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