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STM6915

SamHop Microelectronics
Part Number STM6915
Manufacturer SamHop Microelectronics
Description Dual N-Channel MOSFET
Published Oct 15, 2014
Detailed Description S T M6915 S amHop Microelectronics C orp. Dec, 12 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R O...
Datasheet PDF File STM6915 PDF File

STM6915
STM6915

Overview
S T M6915 S amHop Microelectronics C orp.
Dec, 12 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID 8.
5A R DS (ON) ( m ı ) Max 19 @ V G S = 10V 28 @ V G S = 4.
5V R ugged and reliable.
S urface Mount P ackage.
D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage G ate-S ource Voltage Drain C urrent-C ontinuous @ T a -P ulsed b a S ymbol V DS VGS 25 C 70 C IDM IS PD ID N-Channel 30 20 8.
5 6.
5 40 1.
7 2 1.
44 Unit V V A A A A W C Drain-S ource Diode F orward C urrent a Maximum P ower Dissipation a Operating J unction and S torage Temperature R ange T a= 25 C T a=70 C TJ, TS TG -55 to -150 THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 62.
5 C /W 1 S T M6915 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS = 4.
5V,ID = 5A V DS = 5V, V GS = 10V V DS = 5V, ID = 6A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.
8 16 22 15 13 770 ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 3 19 28 V m ohm m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance C IS S C OS S CRSS c V DS =15V, V GS = 0V f =1.
0MH Z 160 95 14 16 16.
5 S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 2 V DD = 15V, ID = 1A, V GS = 10V, R GE N = 6 ohm R L = 15 ohm ns...


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