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STM6920

SamHop Microelectronics
Part Number STM6920
Manufacturer SamHop Microelectronics
Description Dual N-Channel E nhancement Mode Field Effect Transistor
Published Apr 23, 2008
Detailed Description S T M6920 S amHop Microelectronics C orp. Aug,18 2005 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor...
Datasheet PDF File STM6920 PDF File

STM6920
STM6920

Overview
S T M6920 S amHop Microelectronics C orp.
Aug,18 2005 ver1.
2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.
DataSheet4U.
com 40V F E AT UR E S ( m W ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ).
25 @ V G S = 10V 45 @ V G S = 4.
5V R ugged and reliable.
S urface Mount P ackage.
D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol V DS V GS 25 C 70 C ID IDM IS PD T J , T S TG Limit 40 25 7 5.
9 22 1.
7 2 1.
44 -55 to 150 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.
5 C /W S T M6920 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 25V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6A V GS =4.
5V, ID= 5A V DS = 5V, V GS = 10V V DS = 5V, ID = 6A Min Typ C Max Unit 40 1 V uA 100 nA 1 1.
8 20 35 15 8 947 117 77 2 16.
7 19 3.
6 10.
1 5 14 24 12 4 5 28.
7 38 18.
2 8.
7 2.
8 3.
3 1231 152 100 2.
5 25 45 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current www.
DataSheet4U.
com Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =25V, V GS = 0V f =1.
0MH Z V GS =0V, V DS = 0V, f=1.
0MH Z V DD = 20V ID = 1 A V GS = 10V R GE N = 3.
3 ohm V DS =20V, ID =6A,V GS =10V V DS =20V, ID =6A,V GS ...


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