Power
Transistors
2SD2255
Silicon
NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1493
s Features
q Optimum for 60W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): 2.
5V
4.
0±0.
1
15.
0±0.
5 13.
0±0.
5 10.
5±0.
5
Unit: mm
4.
5±0.
2 2.
0±0.
1
4.
0±0.
1
φ3.
2±0.
1
20.
0±0.
3 19.
0±0.
3 15.
0±0.
2
16.
2±0.
5 12.
5 3.
5 Solder Dip
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
160 140
...