GT40Q321
TOSHIBA Injection Enhanced Gate
Transistor Silicon N Channel IEGT
GT40Q321
Voltage Resonance Inverter Switching Application
· · · · · The 5th generation Enhancement-mode High speed : tf = 0.
41 µs (typ.
) (IC = 40A) Low saturation voltage: VCE (sat) = 2.
8 V (typ.
) (IC = 40A) FRD included between emitter and collector Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 23 ...