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GT40Q323

Toshiba Semiconductor
Part Number GT40Q323
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published May 31, 2009
Detailed Description GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching...
Datasheet PDF File GT40Q323 PDF File

GT40Q323
GT40Q323

Overview
GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application www.
datasheet4u.
com Unit: mm • • • • • Enhancement-mode High speed: tf = 0.
14 μs (typ.
) (IC = 40A) FRD included between emitter and collector 4th generation TO-3P (N) (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 20 39 80 10 80 80 200 150 −55 to 150 Unit V V A A A JEDEC JEITA TOSHIBA ― ― 2-16C1C W °C °C Weight: 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.
625 1.
79 Unit °C/W °C/W Equivalent Circuit Collector Gate Emitter 1 2006-11-01 GT40Q323 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Symbol IGES ICES VGE (OFF) VCE (sat) Cies Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time tr ton tf toff VF trr IF = 10 A, VGE = 0 IF = 10 A, di/dt = −20 A/μs Test Condition VGE = ±25 V, VCE = 0 VCE = 1200 V, ...


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