DatasheetsPDF.com

GT40Q321

Toshiba Semiconductor
Part Number GT40Q321
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switchin...
Datasheet PDF File GT40Q321 PDF File

GT40Q321
GT40Q321

Overview
GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application · · · · · The 5th generation Enhancement-mode High speed : tf = 0.
41 µs (typ.
) (IC = 40A) Low saturation voltage: VCE (sat) = 2.
8 V (typ.
) (IC = 40A) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 23 42 80 10 80 68 170 150 −55 to 150 Unit V V A A A W W °C °C JEDEC JEITA TOSHIBA ― ― 2-16C1C Weight: 4.
6 g (typ.
) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.
74 1.
79 Unit °C/W °C/W Equivalent Circuit Collector Gate Emitter 1 2003-02-05 GT40Q321 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 10 A, VGE = 0 IF = 10 A, di/dt = −20 A/µs Test Condition VGE = ±25 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 40 A VGG = ±15 V, RG = 39 W (Note 1) Min ― ― 4.
0 ― ― ― ― ― ― ― ― Typ.
― ― ― 2.
8 3200 0.
19 0.
25 0.
41 0.
57 ― 0.
6 Max ±500 5.
0 7.
0 3.
6 ― ― ― 0.
72 ― 2.
0 ― V µs µs Unit nA mA V V pF Note 1: Switching time measurement circuit and input/output waveforms VGE 0 RG 0 VCC 0 VCE td (off) RL IC 90% 90% 10% 90% 10% tf toff 10% tr ton General Safety Precautions and Usage Considerations · · The GT40Q321 i...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)