DatasheetsPDF.com

GT40Q322

Toshiba Semiconductor
Part Number GT40Q322
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published May 31, 2009
Detailed Description GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary www.datasheet4u.com GT40Q322 Uni...
Datasheet PDF File GT40Q322 PDF File

GT40Q322
GT40Q322

Overview
GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary www.
datasheet4u.
com GT40Q322 Unit: mm Voltage Resonance Inverter Switching Application • • • • • Enhancement-mode High speed : tf = 0.
14 µs (typ.
) (IC = 40A) FRD included between emitter and collector The 4th generation TO-3P(N) (Toshiba package name) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 20 39 80 10 80 80 200 150 −55 to 150 Unit V V A A A W W °C °C JEDEC JEITA TOSHIBA ― ― 2-16C1C Weight: 4.
6 g (typ.
) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.
625 1.
79 Unit °C/W °C/W Equivalent Circuit Collector...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)