MT4606
September 2008
MT4606
Dual N & P-Channel PowerTrench MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect
transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
• Q1: N-Channel
7A, 30V
RDS(on) = 0.
028Ω @ VGS = 10V
RDS(on) = 0.
040Ω @ VGS = 4.
5V
• Q2: P-Channel
-5A, -30V
RDS(on) = 0.
052Ω @ VGS = -10V
RDS(on) = 0.
080Ω @ VGS = -4.
5V
• Fast switchin...