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MT4600

Part Number	MT4600
Manufacturer	MT Semiconductor
Description	Dual N & P-Channel PowerTrench MOSFET
Published	Aug 5, 2015
Detailed Description	MT4600 Dual N & P-Channel Po werTrench® MOSFET Features • N-Channel 30V/5A, RDS (ON) = 28mΩ (max.) @ VGS =4.5V ...
Datasheet	MT4600 PDF File

Overview

MT4600 Dual N & P-Channel Po werTrench® MOSFET Features • N-Channel 30V/5A, RDS (ON) = 28mΩ (max.
) @ VGS =4.
5V RDS (ON) = 38mΩ (max.
) @ VGS =2.
5V • P-Channel -30V/-4.
6A, RDS (ON) = 63mΩ (max.
) @ VGS =-4.
5V RDS (ON) = 85mΩ (max.
) @ VGS = -2.
5V General Description These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
$SSOLFDWLRQV '&'&SULPDU\EULGJH '&'&6\QFKURQRXVUHFWLILFDWLRQ +RWVZDS )DQGULYH Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) Power Dissipation for Dual Oper...

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