DatasheetsPDF.com

MT4606

MT Semiconductor
Part Number MT4606
Manufacturer MT Semiconductor
Description N+P-Channel Enhancement Mode Field Effect Transistor
Published Apr 7, 2015
Detailed Description MT4606 September 2008 MT4606 Dual N & P-Channel PowerTrench MOSFET General Description These dual N- and P-Channel e...
Datasheet PDF File MT4606 PDF File

MT4606
MT4606

Overview
MT4606 September 2008 MT4606 Dual N & P-Channel PowerTrench MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features • Q1: N-Channel 7A, 30V RDS(on) = 0.
028Ω @ VGS = 10V RDS(on) = 0.
040Ω @ VGS = 4.
5V • Q2: P-Channel -5A, -30V RDS(on) = 0.
052Ω @ VGS = -10V RDS(on) = 0.
080Ω @ VGS = -4.
5V • Fast switching speed • High power and handling capability in a widely used surface mount package DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size MT4606 MT4606 13" 2008 MOS-TECH Semiconductor Corporation Q2 5 6 Q1 7 8 4 3 2 1 Q1 Q2 30 30 ±20 ±20 7 -5 20 -20 2 1.
6 1 0.
9 -55 to +150 Units V V A W °C 78 °C/W 40 °C/W Tape width 12mm Quantity 2500 units MT4606 Rev B MT4606 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage, Forward IGSSR Gate-Body Leakage, Reverse VGS = 0 V,...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)