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ME9926

Dual N-Channel 2.5-V (G-S) MOSFET

Description

Dual N-Channel 2.5-V (G-S) MOSFET GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as c...


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