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ME9926-G

Matsuki
Part Number ME9926-G
Manufacturer Matsuki
Description Dual N-Channel 20V (D-S) MOSFET
Published Jun 6, 2015
Detailed Description Dual N-Channel 20V (D-S) MOSFET ME9926/ME9926-G GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement...
Datasheet PDF File ME9926-G PDF File

ME9926-G
ME9926-G

Overview
Dual N-Channel 20V (D-S) MOSFET ME9926/ME9926-G GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where switching and low in-line power loss are needed in a very small outline surface mount package.
FEATURES ● RDS(ON)≦29mΩ@VGS=4.
5V ● RDS(ON)≦42mΩ@VGS=2.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (SOP-8) Top View e Ordering Information: ME9926 (Pb-free) ME9926-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Maximum Power Dissipation* Operating Junction Temperature TA=25℃ TA=70℃ TA=25℃ TA=70℃ Thermal Resistance-Junction to Ambient* Symbol VDSS VGSS ID IDM PD TJ RθJA 10sec SteadyState 20 ±12 6.
6 5.
2 5.
2 4.
2 30 2.
0 1.
25 1.
2 0.
8 -55 to 150 Typ 45 Typ 80 Max 62.
5 Max 100 e * The device mounted on 1in2 FR4 board with 2 oz copper Unit V V A A W ℃ ℃/W Feb, 2009-Ver1.
2 01 Dual N-Channel 20V (D-S) MOSFET ME9926/ME9926-G Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min Typ Max Unit STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) VSD Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Diode Forward Voltage VGS=0, ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=±12V VDS=20V, VGS=0V VGS=4.
5V, ID= 6.
0A VGS=2.
5V, ID= 5.
2A IS=1.
7A, VGS=0V 20 V 0.
4 0...


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