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ME9926

Aonetek Semiconductor
Part Number ME9926
Manufacturer Aonetek Semiconductor
Description Dual N-Channel High Density Trench MOSFET
Published Jun 6, 2015
Detailed Description Aonetek Semiconductor Co., LTD. Dual N-Channel High Density Trench MOSFET ME9926 PRODUCT SUMMARY VDSS ID RDS(on) (m-...
Datasheet PDF File ME9926 PDF File

ME9926
ME9926

Overview
Aonetek Semiconductor Co.
, LTD.
Dual N-Channel High Density Trench MOSFET ME9926 PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 6.
0A 28 @ VGS = 4.
5V 20V 5.
2A 44 @ VGS = 2.
5V FEATURES ●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Ideal for Li ion battery pack application.
SOP-8 D1 D1 D2 D2 876 5 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa TA=25°C TA=75°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ± 12 6 24 1.
7 2.
0 1.
3 - 55 to 150 Unit V V A A A W °C THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambienta Note a.
Surface Mounted on FR4 Board , t ≤ 10sec .
b.
Pulse width limited by maximum junction temperature.
RthJA 62.
5 °C/W ME9926 ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Parameter Symbol Condition Min Typc Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V , ID = 250uA 20 V Zero Gate Voltage Drain Current IDSS VDS = 20V , VGS = 0V 1 uA Gate-Body Leakage b ON CHARACTERISTICS IGSS VGS = ±12V, VDS = 0V ±100 nA Gate Threshold Voltage VGS(th) VDS = VGS , ID = 250uA 0.
6 0.
9 1.
5 V Drain-Source On-State Resistance RDS(on) VGS = 4.
5V , ID = 6A VGS = 2.
5V , ID = 5.
2A DRAIN-SOURCE DIODE CHARACTERISTICS b 22 28 m-ohm 34 44 Diode Forward Voltage VSD c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS VGS = 0V , IS = 1.
7A VDS = 8V , VGS = 0V f = 1.
0MHz 1.
2 V 553 pF 144 pF 120 pF Turn-On Delay Time Rise Time tD(ON) tr VDD = 10V , ID = 1A VGEN = 4.
5V 9.
6 ns 6.
3 ns Turn-Off Delay Time Fall Time tD(OFF) tf RL = 10 ohm RGEN = 6 ohm 30 ns 6.
5 ns Total Gate Charge Gate-Source Charge Gate-Drain Charge Note...


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