DatasheetsPDF.com

ME9926

Matsuki
Part Number ME9926
Manufacturer Matsuki
Description Dual N-Channel 2.5-V (G-S) MOSFET
Published Jun 6, 2015
Detailed Description Dual N-Channel 2.5-V (G-S) MOSFET GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement mode power fiel...
Datasheet PDF File ME9926 PDF File

ME9926
ME9926

Overview
Dual N-Channel 2.
5-V (G-S) MOSFET GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
ME9926 FEATURES ● RDS(ON)≦29mΩ@VGS=4.
5V ● RDS(ON)≦42mΩ@VGS=2.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature TA=25℃ TA=70℃ Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM PD TJ RθJA RθJC Steady State 20 ±12 6 28 2.
0 1.
2 -55 to 150 T≦10 sec 62.
5 Steady State 88 50 e * The device mounted on 1in2 FR4 board with 2 oz copper Unit V V A A W ℃ ℃/W ℃/W July, 2008-Ver1.
1 01 Dual N-Channel 2.
5-V (G-S) MOSFET ME9926 Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min STATIC BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON) VSD Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistance Diode Forward Voltage VGS=0, ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=±12V VDS=20V, VGS=0V VDS≧5V, VGS= 4.
5V VGS=4.
5V, ID= 6.
0A VGS=2.
5V, ID= 5.
2A IS=1.
7A, VGS=0V 20 0.
4 30 DYNAMIC Qg Total Gate Charge Qgs Gate-Source...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)