Part Number
|
HFP640 |
Manufacturer
|
SemiHow |
Description
|
200V N-Channel MOSFET |
Published
|
Jun 7, 2015 |
Detailed Description
|
HFP640
July 2005
HFP640
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A
FEATURES
Originative Ne...
|
Datasheet
|
HFP640
|
Overview
HFP640
July 2005
HFP640
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ = 0.
145ȍ ID = 18 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
145 ȍ (Typ.
) @VGS=10V 100% Avalanche Tested
TO-220
1 23
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note...
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