isc Silicon
NPN Darlington Power
Transistor
2SD1230
DESCRIPTION ·High DC Current Gain
: hFE= 1500(Min.
)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.
) ·Complement to Type 2SB913 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage
regulator control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
110
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
Collector Power Dissipation @Ta=25℃ PC...