isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 500(Min)@ (VCE= 2V, IC= 5A) ·High Breakdown Voltage :VCEO(sus)=200V（Min） ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Motor drive applications ·High current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
ICP
Collector Current-Peak
18
A
IB
Base Current
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
1
A...