BLV297

BLV297 N-channel Enhancement Mode Power MOSFET • Ease of Paralleling • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 200V 2.0Ω 0.65A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit. o Die size with scribe line Scribe line o Die Thickness...