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BLV25

NXP
Part Number BLV25
Manufacturer NXP
Description VHF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification August 1986 Philips Semiconductors...
Datasheet PDF File BLV25 PDF File

BLV25
BLV25

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily for use in v.
h.
f.
-f.
m.
broadcast transmitters.
FEATURES • internally matched input for wideband operation and high power gain; • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; • gold-metallization ensures excellent reliability.
The transistor has a 1⁄2in 6-lead flange envelope with a ceramic cap.
All leads are isolated from the flange.
QUICK REFERENCE DATA R.
F.
performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit.
MODE OPERATION narrow band; c.
w.
PIN CONFIGURATION VCE V 28 f MHz 108 PL W 175 PS W < 17,5 Gp dB > 10,0 PINNING PIN 1 handbook, halfpage BLV25 η % > 65 DESCRIPTION emitter emitter base collector emitter emitter 1 2 2 3 4 5 6 3 4 5 6 MSB006 Fig.
1 Simplified outli...


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