DATA SHEET
MOS FIELD EFFECT POWER
TRANSISTORS
2SJ132, 2SJ132-Z
P-CHANNEL POWER MOS FET FOR SWITCHING
FEATURES • Gate drive available at logic level (VGS = −4 V) • High current control available in small
dimension due to low RDS(on) (≅ 0.
25 Ω) • 2SJ132-Z is a lead process product and is deal
for mounting a hybrid IC.
QUALITY GRADES • Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No.
C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to source voltage
VDSS
VGS = 0
Gate to source voltage
VGSS
VDS = 0
...