Part Number
|
FDMS3660S |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Asymmetric Dual N-Channel MOSFET |
Published
|
Oct 18, 2015 |
Detailed Description
|
FDMS3660S PowerTrench® Power Stage
FDMS3660S
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-C...
|
Datasheet
|
FDMS3660S
|
Overview
FDMS3660S PowerTrench® Power Stage
FDMS3660S
PowerTrench® Power Stage
Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.
5 V, ID = 11 A
Q2: N-Channel Max rDS(on) = 1.
8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.
2 mΩ at VGS = 4.
5 V, ID = 27 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
February 2015
General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connect...
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