H5N2507P 250V - 50A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.
04  typ.
(at ID = 25 A, VGS= 10 V, Ta = 25°C)  Low leakage current  High speed switching  Low gate charge  Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P ) 4 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 s, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C G Symbol VDSS VGSS ID ID (pulse) Not...

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