2N3055, MJ2955
Complementary Power
Transistors
Designed for use in general-purpose amplifier and switching applications.
Features:
• Power dissipation - PD = 115W at TC = 25°C.
• DC current gain hFE = 20 to 70 at IC = 4.
0A.
• VCE(sat) = 1.
1V (Maximum) at IC = 4.
0A, IB = 400mA.
Pin 1.
Base 2.
Emitter Collector(Case)
Dimensions Minimum Maximum
A
38.
75
39.
96
B
19.
28
22.
23
C 7.
96 9.
28
D
11.
18
12.
19
E
25.
20
26.
67
F 0.
92 1.
09
G 1.
38 1.
62
H
29.
90
30.
40
I
16.
64
17.
30
J 3.
88 4.
36
K
10.
67
11.
18
Dimensions : Millimetres
NPN 2N3055
PNP MJ2955
15 Ampere Complementary Silicon
Power
Transistors 60 Volts 115 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage...