P-Channel MOSFET
2SJ550(L), 2SJ550(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0897-0300 (Previous: ADE-208-633A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Pa...
Renesas