H5N2509P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: R DS (on) = 0.
053 Ω typ.
• Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) • High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.
3 Ω, VGS = 10 V) • Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) • Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1109-0200 (Previous: ADE-208-1378) Rev.
2.
00 Sep 07, 2005 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
2.
00 Sep 07, 2005 page 1 of 6 H5N2509P Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body...

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