Part Number
|
RU6H2K |
Manufacturer
|
Ruichips |
Description
|
N-Channel Advanced Power MOSFET |
Published
|
Apr 26, 2016 |
Detailed Description
|
RU6H2K
N-Channel Advanced Power MOSFET
Features
• 600V/2A,
RDS (ON) =4000mΩ(Typ.)@VGS=10V
• Gate charge minimized • Low...
|
Datasheet
|
RU6H2K
|
Overview
RU6H2K
N-Channel Advanced Power MOSFET
Features
• 600V/2A,
RDS (ON) =4000mΩ(Typ.
)@VGS=10V
• Gate charge minimized • Low Crss( Typ.
5pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High efficiency switch mode power supplies • Lighting
Pin Description
GDS TO251
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Cur...
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