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RU6H2K

Part Number	RU6H2K
Manufacturer	Ruichips
Description	N-Channel Advanced Power MOSFET
Published	Apr 26, 2016
Detailed Description	RU6H2K N-Channel Advanced Power MOSFET Features • 600V/2A, RDS (ON) =4000mΩ(Typ.)@VGS=10V • Gate charge minimized • Low...
Datasheet	RU6H2K PDF File

Overview

RU6H2K N-Channel Advanced Power MOSFET Features • 600V/2A, RDS (ON) =4000mΩ(Typ.
)@VGS=10V • Gate charge minimized • Low Crss( Typ.
5pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • High efficiency switch mode power supplies • Lighting Pin Description GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Cur...

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