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RU6H4R

Part Number	RU6H4R
Manufacturer	Ruichips
Description	N-Channel Advanced Power MOSFET
Published	Apr 26, 2016
Detailed Description	RU6H4R N-Channel Advanced Power MOSFET Features • 600V/4A, RDS (ON) =1800mΩ(Typ.)@VGS=10V • Super High Dense Cell Desig...
Datasheet	RU6H4R PDF File

Overview

RU6H4R N-Channel Advanced Power MOSFET Features • 600V/4A, RDS (ON) =1800mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • Fast Switching • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • High efficiency switch mode power supplies • Lighting Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation ...

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