Part Number
|
G4BC20F |
Manufacturer
|
International Rectifier |
Description
|
IRG4BC20F |
Published
|
Jul 6, 2009 |
Detailed Description
|
com
PD - 91602A
IRG4BC20F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium oper...
|
Datasheet
|
G4BC20F
|
Overview
com
PD - 91602A
IRG4BC20F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
66V
@VGE = 15V, IC = 9.
0A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC ...
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