DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2369/2SK2370
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high
voltage switching applications.
PACKAGE DIMENSIONS (in millimeters)
φ 3.
0 ± 0.
2
1.
0
15.
7 MAX 4 4.
7 MAX.
1.
5
FEATURES
• Low On-Resistance
2SK2370: RDS(on) = 0.
4 Ω (VGS = 10 V, ID = 10 A)
20.
0 ± 0.
2
• Low Ciss Ciss = 2400 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source
Voltage(2SAK2369/2370) VDSS Gate to Source
Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Tempe...