TPCC8008
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
TPCC8008
Notebook PC Applications Portable Equipment Applications
• • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 4.
5 mΩ (typ.
) ( VGS = 10 V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1.
0 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source
voltage Drain-gate
voltage (RGS = 20 kΩ) Gate-source
voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±25 25 75 30 1.
9
www.
DataSheet.
net/
Unit V V V A W W W mJ A mJ °C °C 1,2,3:SOU...