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TPCC8007

Toshiba Semiconductor
Part Number TPCC8007
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 20, 2014
Detailed Description TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS) TPCC8007 1. Applications • • Notebook PCs Mobile Handsets 2. Features ...
Datasheet PDF File TPCC8007 PDF File

TPCC8007
TPCC8007

Overview
TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS) TPCC8007 1.
Applications • • Notebook PCs Mobile Handsets 2.
Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.
5 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.
5 to 1.
2 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) (Note 4) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating 20 ±12 27 81 30 1.
9 0.
7 190 27 150 -55 to 150 W W W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2011-06-09 Rev.
4.
0 TPCC8007 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max 4.
1 65.
7 178 Unit /W /W /W Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board...


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