DatasheetsPDF.com

TPCC8009

Toshiba Semiconductor
Part Number TPCC8009
Manufacturer Toshiba Semiconductor
Description Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Published Oct 1, 2012
Detailed Description TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCC8009 Lithium Ion Battery Applications ...
Datasheet PDF File TPCC8009 PDF File

TPCC8009
TPCC8009

Overview
TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCC8009 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.
) ( VGS = 10 V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 2.
0 to 3.
0 V (VDS = 10 V, ID = 0.
2 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 30 ±20 24 72 27 1.
9 0.
7 75 24 150 −55 to 150 www.
DataSheet.
net/ Unit V V V A W W W mJ A °C °C Pulsed (Note 1) (Tc = 25℃) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Drain power dissipation Drain power dissipation Drain power dissipation Single-pulse avalanche energy (Note 3) Avalanche current Channel temperature Storage temperature range 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Note: For Notes 1 to 3, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Handle with care.
Weight: 0.
02 g (typ.
) Circuit Configuration 8 7 6 5 1 2 3 4 1 2010-01-05 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ TPCC8009 Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc = 25℃) Thermal...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)