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C5019

Panasonic
Part Number C5019
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Mar 2, 2021
Detailed Description Transistors 2SC5019 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 4.5±0.1 ■ Featur...
Datasheet PDF File C5019 PDF File

C5019
C5019

Overview
Transistors 2SC5019 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 4.
5±0.
1 ■ Features 1.
6±0.
2 1.
5±0.
1 • Low noise figure NF 2.
5±0.
1 3˚ 4.
0–+00.
.
2205 • High maximum unilateral power gain GUM • High transition frequency fT • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packing 1 0.
4±0.
08 1.
5±0.
1 23 0.
5±0.
08 3˚ 1.
0–+00.
.
21 0.
4±0.
04 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit 2.
6±0.
1 0.
4 max.
c e.
d typ Collector-base voltage (Emitter open) VCBO 15 V n d stag tinue Collector-emitter voltage (Base open) VCEO 10 V a e cle con Emitter-base voltage (Collector open) VEBO 2 V lifecy , dis Collector current IC 80 mA n u ct ped Collector power dissipation * PC 1 W te tin Produ ed ty Junction temperature Tj 150 °C ur tinu Storage temperature Tstg −55 to +150 °C ing fo iscon Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.
7 mm in thickness in n llow d d Absolute maximum rating without heat sink for PC is 0.
5 W 45˚ 3.
0±0.
15 1: Base 2: Collector 3: Emitter MiniP3-F1 Package Marking Symbol: 1W a o includestyfpoe, plane ■ Electrical Characteristics Ta = 25°C ± 3°C c tinued ance Parameter Symbol Conditions M is con inten Collector-base voltage (Emitter open) /Dis ma Collector-emitter voltage (Base open) D ance type, Collector-base cutoff current (Emitter open) ten ce Emitter-base cutoff current (Collector open) Main tenan Forward current transfer ratio ain Transition frequency d m Collector output capacitance (plane (Common base, input open circuited) VCBO VCEO ICBO IEBO hFE fT Cob IC = 10 µA, IE = 0 IC = 100 µA, IB = 0 VCB = 10 V, IE = 0 VEB = 2 V, IC = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 0.
8 GHz VCB = 10 V, IE = 0, f = 1 MHz Min Typ Max Unit 15 V 10 V 1 µA 1 µA 80 250  5 6 GHz 0.
9 1.
2 pF Foward transfer gain S21e2 VCE = 8 V, IC ...


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