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SSF7N60

SILIKRON
Part Number SSF7N60
Manufacturer SILIKRON
Description N-Channel MOSFET
Published May 22, 2016
Detailed Description SSF7N60 Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% aval...
Datasheet PDF File SSF7N60 PDF File

SSF7N60
SSF7N60

Overview
SSF7N60 Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
Application ■ High current, high speed switching ■ Ideal for off-line power supply, adaptor, PFC VDSS = 600V ID = 7A Rdson = 0.
9Ω (typ.
) SSF7N60 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Max.
7.
2 4.
8 28.
8 145 0.
8 ±30 586 4 15 4.
5 –55 to +150 Thermal Resistance RθJC RθCS Parameter Junction-to-case Case-to-Sink,Flat,Greased Surface Min.
— — Typ.
Max.
— 0.
86 0.
50 — RθJA Junction-to-Ambient — — 62.
5 Units A W W/ Cْ V mJ A mJ V/ns ْC Units ْC/W ©Silikron Semiconductor Corporation 2010.
1.
10 Version: 1.
0 page 1of6 SSF7N60 Electrical Characteristics @TJ=25 ْC (unless otherwise specified) V(BR)DSS △ V(BR)DSS/ △ TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance Min.
Typ.
600 — — 0.
6 — 0.
9 2.
0 — — 6.
4 IDSS Drain-to-Source Leakage current —— —— IGSS Qg Qgs Gate-to-Source Forward leakage Gate-to-S...


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