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SSF7N60F

GOOD-ARK
Part Number SSF7N60F
Manufacturer GOOD-ARK
Description 600V N-Channel MOSFET
Published Jan 16, 2016
Detailed Description Main Product Characteristics VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A TO-220F Features and Benefits  Advanced trench ...
Datasheet PDF File SSF7N60F PDF File

SSF7N60F
SSF7N60F

Overview
Main Product Characteristics VDSS 600V RDS(on) 0.
9ohm(typ.
) ID 7A TO-220F Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF7N60F 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=15.
7mH Avalanche Current @ L=15.
7mH Operating Junction and Storage Temperature Range Max.
7 4.
4 28 48 0.
38 600 ± 30 607.
9 8.
8 -55 to + 150 Units A W W/°C V V mJ A °C Www.
goodark.
com Page 1 of 7 Rev.
1.
0 SSF7N60F 600V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ.
— — — Max.
2.
6 62 40 Units ℃/W ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input...


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