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SSF7N60B

Fairchild Semiconductor
Part Number SSF7N60B
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Feb 27, 2006
Detailed Description SSF7N60B November 2001 SSF7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field...
Datasheet PDF File SSF7N60B PDF File

SSF7N60B
SSF7N60B

Overview
SSF7N60B November 2001 SSF7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Features • • • • • • 5.
4A, 600V, RDS(on) = 1.
2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ! # " ! ! G! G D S TO-3PF SSF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSF7N60B 600 5.
4 3.
4 21.
6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 420 5.
4 8.
6 5.
5 86 0.
69 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8! from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 1.
45 40 Units °C/W °C/W ©2001 Fairchild Semiconductor Corporation Rev.
B, November 2001 SSF7N60B Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse V...


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