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2SC5057

Hitachi Semiconductor
Part Number 2SC5057
Manufacturer Hitachi Semiconductor
Description Silicon NPN Triple Diffused Planar Transistor
Published Jun 12, 2016
Detailed Description 2SC5057 Silicon NPN Triple Diffused Planar Application HDTV horizontal deflection output Features • High breakdown volt...
Datasheet PDF File 2SC5057 PDF File

2SC5057
2SC5057

Overview
2SC5057 Silicon NPN Triple Diffused Planar Application HDTV horizontal deflection output Features • High breakdown voltage VCBO = 1700 V Outline TO-3PL 1 2 3 1.
Base 2.
Collector 3.
Emitter 2SC5057 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(surge) PC*1 Tj Tstg Ratings 1700 900 6 20 25 200 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CEO voltage 900 Emitter to base breakdown voltage V(BR)EBO 6 Collector to emitter cutoff current ICES — DC current transfer ratio Collector to emitter saturation voltage hFE VCE(sat) — — Base to emitter saturation voltage VBE(sat) — Fall time tf — Typ — — — — — — — Max — Unit V Test conditions IC = 10 ...


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