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MT3S111TU

Toshiba Semiconductor
Part Number MT3S111TU
Manufacturer Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion A...
Datasheet PDF File MT3S111TU PDF File

MT3S111TU
MT3S111TU

Overview
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Features • Low-Noise Figure: NF=0.
85 dB (typ.
) (@ f=1 GHz) • High Gain: |S21e|2=12.
5 dB (typ.
) (@ f=1 GHz) 2.
1±0.
1 1.
7±0.
1 Unit: mm 0.
3-+00.
.
015 1 23 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 0.
7±0.
05 Marking 3 R5 1.
BASE 2.
EMITTER 3.
COLLECTOR 12 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight: 6.
6 mg (typ.
) Collector-emitter voltage VCES 13 V Collector-emitter voltage VCEO 6 V Emitter-base voltage VEBO 0.
6 V Collector-current IC 100 mA Base-current IB 10 mA Collector power dissipation PC(Note 1) 800 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: The device is mounted on a ceramic board (25.
4 mm x 25.
4 mm x 0.
8 mm (t)) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-03-31 Microwave Characteristics (Ta = 25°C) MT3S111TU Characteristics Symbol Test Condition Transition frequency Insertion gain Noise figure 3rd order intermodulation distortion output intercept point fT |S21e|2(1) |S21e|2(2) NF(1) NF(2) OIP3 VCE=5 V,IC=30 mA VCE=5 V,IC=30 mA,f=500 MHz VCE=5 V,IC=30 mA,f=1 GHz VCE=5 V,IC=30 mA,f=500 MHz VCE=5 V,IC=30 mA,f=1 GHz VCE=5 V,IC=30 mA,f=500 MHz, ⊿f=1 MHz Min Typ.
Max Unit 8 10 ⎯ GHz ⎯ 18 ⎯ dB 10.
5 12.
5 ⎯ dB ⎯ 0.
6 ⎯ dB ⎯ 0...


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