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MT3S111

Toshiba Semiconductor
Part Number MT3S111
Manufacturer Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Appli...
Datasheet PDF File MT3S111 PDF File

MT3S111
MT3S111

Overview
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure: NF=0.
9 dB (typ.
) (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.
) (@ f=1 GHz) MT3S111 Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range Symbol VCES VCEO VEBO IC IB PC PC (Note 1) Tj Tstg Rating 13 6 0.
6 100 10 160 700 150 −55 to 150 Unit V V V mA mA mW mW °C °C 1.
Base 2.
Emitter 3.
Collector S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Note 1: The device is mounted on a ceramic board (25.
4 mm x 25.
4 mm x 0.
8 mm (t)) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 2007-12 1 2014-09-26 Microwave Characteristics (Ta = 25°C) MT3S111 Characteristics Symbol Test Condition Transition frequency Insertion gain Noise figure 3rd order intermodulation distortion output intercept point fT |S21e|2(1) |S21e|2(2) NF(1) NF(2) OIP3 VCE=5 V, IC=30 mA VCE=5 V, IC=30 mA, f=500 MHz VCE=5 V, IC=30 mA, f=1 GHz VCE=5 V, IC=30 mA, f=500 MHz VCE=5 V, IC=30 mA, f=1 GHz VCE=5 V, IC=30 mA, f=500 MHz, ⊿f=1 MHz Min Typ.
Max Unit 9 11.
5  GHz  17.
5  dB 10 12  dB  0.
65  dB  0.
9 1.
2 dB ...


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