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MT3S111P

Toshiba Semiconductor
Part Number MT3S111P
Manufacturer Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P MT3S111P VHF-UHF Low-Noise, Low-Distortion Amp...
Datasheet PDF File MT3S111P PDF File

MT3S111P
MT3S111P

Overview
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure: NF=0.
95 dB (typ.
) (@f=1 GHz) • High Gain: |S21e|2=10.
5 dB (typ.
) (@f=1 GHz) Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit PW-Mini JEDEC ⎯ JEITA SC-62 TOSHIBA 2-5K1A Weight:0.
05 g (typ.
) Collector-emitter voltage VCES 13 V Collector-emitter voltage VCEO 6 V Emitter-base voltage VEBO 0.
6 V Collector-current IC 100 mA Base-current IB 10 mA Collector power dissipation PC 300 mW Collector power dissipation PC(Note 1) 1 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: The device is mounted on a ceramic board (16 mm×16 mm×0.
8 mm (t)) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-03-31 Microwave Characteristics (Ta = 25°C) MT3S111P Characteristics Transition frequency Insertion gain Noise figure 3rd order intermodulation distortion output intercept point Symbol Test Condition fT |S21e|2(1) |S21e|2(2) NF(1) NF(2) OIP3 VCE=5 V, IC=30 mA VCE=5 V, IC=30 mA, f=500 MHz VCE=5 V, IC=30 mA, f=1 GHz VCE=5 V, IC=30 mA, f=500 MHz VCE=5 V, IC=30 mA, f=1 GHz VCE=5 V, IC=30 mA, f=500 MHz, ⊿f=1 MHz Min Typ.
Max Unit 6 8 ⎯ GHz ⎯ 16 ⎯ dB 8.
5 10.
5 ⎯ dB ⎯ 0.
7 ⎯ dB ⎯ 0.
95 1.
25 dB ⎯ 32 ⎯ dBmW Electrical Characteristics (Ta = 25°C) Characteris...


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