DatasheetsPDF.com

TMP7N90

TRinno
Part Number TMP7N90
Manufacturer TRinno
Description N-channel MOSFET
Published Jun 15, 2016
Detailed Description Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet PDF File TMP7N90 PDF File

TMP7N90
TMP7N90

Overview
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N90/TMPF7N90G VDSS = 990 V @Tjmax ID = 7A RDS(ON) = 1.
9 W(max) @ VGS= 10 V D G Device TMP7N90 TMPF7N90G Package TO-220 TO-220F S Marking TMP7N90 Remark RoHS TMPF7N90G Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient February 2014 : Rev 0.
1 Symbol RqJC RqJA www.
trinnotech.
com TMP7N90 TMPF7N90G 900 ±30 7 7* 4.
31 4.
31 * 28 28* 106 7 25 250 40.
3 2 0.
32 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ TMP7N90 0.
5 62.
5 TMPF7N90G 3.
1 62.
5 Unit ℃/W ℃/W 1/7 TMP7N90/TMPF7N90G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 900 -- -- V Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- IDSS VDS = 720 V, TC = 125°C -- -- 10 µA -- 100 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) RDS(on) gFS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.
5 A VDS = 30 V, ID = 3.
5 A 2 -...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)