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BU4508AF

Part Number	BU4508AF
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 26, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU4508AF DESCRIPTION ·Collector-Emit...
Datasheet	BU4508AF PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU4508AF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High-voltage high-speed switching APPLICATIONS ·Designed for use in horizontal deflection circuits of CTV receivers and p.
c monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.
5 V IC Collector Current- Continuous 8A ICM Collector Current-Peak 15 A IB Base Current- Continuous 7A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6A 45 W 150 ℃ -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.
8 ℃/W isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU4508AF ELECTRICAL CHARACTERISTICS TC=25℃ unless o...

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