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BU4508AX

Part Number	BU4508AX
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor BU4508AX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·...
Datasheet	BU4508AX PDF File

Overview

isc Silicon NPN Power Transistor BU4508AX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High-voltage high-speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of CTV receivers and p.
c monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.
5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak IB Base Current- Continuous 15 A 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ 6 A 45 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.
8 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU4508AX ...

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