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BU4508DZ

NXP
Part Number BU4508DZ
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced...
Datasheet PDF File BU4508DZ PDF File

BU4508DZ
BU4508DZ

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP.
5.
0 1.
85 300 MAX.
1500 800 8 15 32 3.
0 2.
2 400 UNIT V V A A W V A V ns Ths ≤ 25 ˚C IC = 5.
0 A; IB = 1.
25 A f= 16 kHz IF = 5 A ICsat = 5 A; f = 16kHz PINNING - SOT186A PIN 1 2...


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