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2N12

Inchange Semiconductor
Part Number 2N12
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jun 26, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N12 ·FEATURES ·Drain Current ID= 2A@...
Datasheet PDF File 2N12 PDF File

2N12
2N12

Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N12 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.
75Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 120 ±30 V V ID Drain Current-Continuous 2A IDM Drain Current-Single Plused 5A PD Total Dissipation @TC=25℃ 25 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N12 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=1mA IS= 2A ;VGS= 0 VGS= 10V; ID= 1A VGS= ±20V;VDS= 0 VDS=120V; VGS= 0 MIN TYPE MAX UNIT 120 V 2.
0 4.
0 V 1.
4 V 1.
75 Ω ±100 nA 250 µA · isc website：www.
iscsemi.
cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn ...


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