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2SK2115

Hitachi Semiconductor
Part Number 2SK2115
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Jul 11, 2016
Detailed Description 2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High sp...
Datasheet PDF File 2SK2115 PDF File

2SK2115
2SK2115

Overview
2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline TO-220CFM D 12 3 1.
Gate G 2.
Drain 3.
Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 450 500 ±30 5 20 5 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2114, 2SK2115 Electrical Characteristics (Ta = 25°C) Item Drain to source 2SK2114 breakdown voltage 2SK2115 Gate to source breakdown voltage Gate to source leak current Zero gate 2SK2114 voltage drain current 2SK2115 Gate to source cutoff voltage ...


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